You can also specify a visible range for labeling features in a layer.In the Visible range section, do any of the following to set the maximum zoom level.Drag the handle on the slider to the maximum zoom level.Use the maximum zoom scale drop-down menu below the slider to choose the best zoom level-for example, World or Country.Click the drop-down menu below the slider, click Custom, and type the maximum zoom level.Click the drop-down menu below the slider, and click Current map view to use the current extent of the map.Repeat the previous step for the minimum zoom level.If you own the map, click Save and open and click Save on the Contents (dark) toolbar to save the visible range setting to the map.We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits.The Al0.95Ga0.05Sb buffer layer is important to achieve low substrate leakage and guarantee good channel material quality and high hole mobility. We grew buffer layers with various Sb effective flux conditions using molecular beam epitaxy to obtain high crystal quality and proper electrical properties. We systematically evaluated the relationship between the crystal quality and electrical properties using X-ray diffraction, atomic force microscope, Raman, and the Hall effect measurement system. Then, on this optimized buffer layer, we grew the In0.2Al0.8Sb/In0.25Ga0.75Sb/linear-graded Al0.8Ga0.2Sb QW structure to obtain high hole mobility with compressive strain. Moreover, the compressive strain and hole mobility were measured by Raman and Hall effect measurement system.
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